Low-Temperature Atomic Layer Deposition of Hafnium Oxide for Gating Applications

• Published in: ACS applied materials & interfaces 2022-07, Vol.14 (29), p.33960-33967
• Main Authors: Shekhar, Pragya, Shamim, Saquib, Hartinger, Simon, Schlereth, Raimund, Hock, Volkmar, Buhmann, Hartmut, Kleinlein, Johannes, Molenkamp, Laurens W.
• Format: Article
• Language: English
• Subjects: Surfaces, Interfaces, and Applications
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.2c06176

We present a novel low-temperature (30 °C) atomic layer deposition process for hafnium oxide and apply the layers as gate dielectric to fabricate devices out of the thermally sensitive topological insulator HgTe. The key to achieving self-limiting growth at these low temperatures is the incorporation of sufficiently long purge times ( ≥150 s) in the deposition cycles. We investigate the structural and compositional properties of these thin films using X-ray reflectometry and photoelectron spectroscopy, finding a growth rate of 1.6 Å per cycle and an atomic ratio of Hf/O of 1:1.85. In addition, we report on the transport properties of the microstructured devices, which are much enhanced compared to previous device generations. We determine a relative permittivity of ∼15 for our HfO2 layers. Our process considerably reduces the thermal load of the samples during microfabrication and can be adapted to a broad range of materials, enabling the fabrication of high-quality gate insulators on various temperature-sensitive materials.