Comparison of the etching behavior of GaAs and GaN in a chemically-assisted ion-beam etching system

The characteristics of Cl 2 Ar chemically-assisted ion-beam etching processes for GaN and GaAs are reported. The etch rate and anisotropy have been investigated varying ion energy, tilt angle, substrate temperature, and Cl 2 flow. Vertical and smooth sidewalls, which fulfill the requirements on lase...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 1999, Vol.46 (1), p.323-326
Main Authors: Eberhard, F., Schauler, M., Deichsel, E., Kirchner, C., Unger, P.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The characteristics of Cl 2 Ar chemically-assisted ion-beam etching processes for GaN and GaAs are reported. The etch rate and anisotropy have been investigated varying ion energy, tilt angle, substrate temperature, and Cl 2 flow. Vertical and smooth sidewalls, which fulfill the requirements on laser facets, have been demonstrated in GaAs and GaN.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(99)00095-7