Excimer laser deposition and characteristics of tin oxide thin films

ArF excimer laser assisted chemical vapor deposition of tin oxide thin films on Si was obtained using SnCl 4 and O 2as precursors. Experimental measurements revealed that the deposition rate increases with incident laser energy density. The composition, structure and ultraviolet-to-visible spectra o...

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Bibliographic Details
Published in:Thin solid films 1998-05, Vol.320 (2), p.216-219
Main Authors: Dai, Guorui, Jiang, Xilan, Zhang, Yushu
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Excimer laser
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Tin oxide thin films
Vapor deposition
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Summary:ArF excimer laser assisted chemical vapor deposition of tin oxide thin films on Si was obtained using SnCl 4 and O 2as precursors. Experimental measurements revealed that the deposition rate increases with incident laser energy density. The composition, structure and ultraviolet-to-visible spectra of the thin films were investigated by means of XPS, SEM, XRD and a UV–Vis techniques. It was shown that SnO 2and SnOCl 2 coexisted in the thin films, and SnOCl 2 was almost completely converted into SnO 2 after annealing. The SnO 2 thin films deposited at room temperature were amorphous in structure and the grain size of the films became larger after annealing. The transmittance of the SnO 2 thin films is above 90%, the absorption edge is 355 nm and the energy gap is 3.49 eV.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(97)01006-7