Excimer laser deposition and characteristics of tin oxide thin films

ArF excimer laser assisted chemical vapor deposition of tin oxide thin films on Si was obtained using SnCl 4 and O 2as precursors. Experimental measurements revealed that the deposition rate increases with incident laser energy density. The composition, structure and ultraviolet-to-visible spectra o...

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Published in:Thin solid films 1998-05, Vol.320 (2), p.216-219
Main Authors: Dai, Guorui, Jiang, Xilan, Zhang, Yushu
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Excimer laser
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Tin oxide thin films
Vapor deposition
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cited_by cdi_FETCH-LOGICAL-c367t-18c591f2f6e412658464d89f090908b545ba967df28cc470eca8b09fea3de7023
cites cdi_FETCH-LOGICAL-c367t-18c591f2f6e412658464d89f090908b545ba967df28cc470eca8b09fea3de7023
container_end_page 219
container_issue 2
container_start_page 216
container_title Thin solid films
container_volume 320
creator Dai, Guorui
Jiang, Xilan
Zhang, Yushu
description ArF excimer laser assisted chemical vapor deposition of tin oxide thin films on Si was obtained using SnCl 4 and O 2as precursors. Experimental measurements revealed that the deposition rate increases with incident laser energy density. The composition, structure and ultraviolet-to-visible spectra of the thin films were investigated by means of XPS, SEM, XRD and a UV–Vis techniques. It was shown that SnO 2and SnOCl 2 coexisted in the thin films, and SnOCl 2 was almost completely converted into SnO 2 after annealing. The SnO 2 thin films deposited at room temperature were amorphous in structure and the grain size of the films became larger after annealing. The transmittance of the SnO 2 thin films is above 90%, the absorption edge is 355 nm and the energy gap is 3.49 eV.
doi_str_mv 10.1016/S0040-6090(97)01006-7
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_26896080</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609097010067</els_id><sourcerecordid>26896080</sourcerecordid><originalsourceid>FETCH-LOGICAL-c367t-18c591f2f6e412658464d89f090908b545ba967df28cc470eca8b09fea3de7023</originalsourceid><addsrcrecordid>eNqFkMtLAzEQxoMoWKt_grAHET2sTrK7eZxEan1AwYN6Dml2QiP7qEkq9b93-8Crl5k5_L5vZj5CzincUKD89g2ghJyDgislroEC8FwckBGVQuVMFPSQjP6QY3IS4ycAUMaKEXmYrq1vMWSNiUOtcdlHn3zfZaarM7swwdiEwcfkbcx6lyXfZf3a15ilxTA637TxlBw500Q82_cx-Xicvk-e89nr08vkfpbbgouUU2krRR1zHEvKeCVLXtZSueEqBXJeldXcKC5qx6S1pQC0Rs5BOTRFjQJYMSaXO99l6L9WGJNufbTYNKbDfhU141JxkDCA1Q60oY8xoNPL4FsTfjQFvclMbzPTm0C0EnqbmRaD7mK_wERrGhdMZ338EzOmRME39nc7DIdnvz0GHa3HzmLtA9qk697_s-gXT-9_ow</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26896080</pqid></control><display><type>article</type><title>Excimer laser deposition and characteristics of tin oxide thin films</title><source>ScienceDirect Journals</source><creator>Dai, Guorui ; Jiang, Xilan ; Zhang, Yushu</creator><creatorcontrib>Dai, Guorui ; Jiang, Xilan ; Zhang, Yushu</creatorcontrib><description>ArF excimer laser assisted chemical vapor deposition of tin oxide thin films on Si was obtained using SnCl 4 and O 2as precursors. Experimental measurements revealed that the deposition rate increases with incident laser energy density. The composition, structure and ultraviolet-to-visible spectra of the thin films were investigated by means of XPS, SEM, XRD and a UV–Vis techniques. It was shown that SnO 2and SnOCl 2 coexisted in the thin films, and SnOCl 2 was almost completely converted into SnO 2 after annealing. The SnO 2 thin films deposited at room temperature were amorphous in structure and the grain size of the films became larger after annealing. The transmittance of the SnO 2 thin films is above 90%, the absorption edge is 355 nm and the energy gap is 3.49 eV.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(97)01006-7</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Excimer laser ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Tin oxide thin films ; Vapor deposition</subject><ispartof>Thin solid films, 1998-05, Vol.320 (2), p.216-219</ispartof><rights>1998 Elsevier Science S.A.</rights><rights>1998 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-18c591f2f6e412658464d89f090908b545ba967df28cc470eca8b09fea3de7023</citedby><cites>FETCH-LOGICAL-c367t-18c591f2f6e412658464d89f090908b545ba967df28cc470eca8b09fea3de7023</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=2297360$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Dai, Guorui</creatorcontrib><creatorcontrib>Jiang, Xilan</creatorcontrib><creatorcontrib>Zhang, Yushu</creatorcontrib><title>Excimer laser deposition and characteristics of tin oxide thin films</title><title>Thin solid films</title><description>ArF excimer laser assisted chemical vapor deposition of tin oxide thin films on Si was obtained using SnCl 4 and O 2as precursors. Experimental measurements revealed that the deposition rate increases with incident laser energy density. The composition, structure and ultraviolet-to-visible spectra of the thin films were investigated by means of XPS, SEM, XRD and a UV–Vis techniques. It was shown that SnO 2and SnOCl 2 coexisted in the thin films, and SnOCl 2 was almost completely converted into SnO 2 after annealing. The SnO 2 thin films deposited at room temperature were amorphous in structure and the grain size of the films became larger after annealing. The transmittance of the SnO 2 thin films is above 90%, the absorption edge is 355 nm and the energy gap is 3.49 eV.</description><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Excimer laser</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Tin oxide thin films</subject><subject>Vapor deposition</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNqFkMtLAzEQxoMoWKt_grAHET2sTrK7eZxEan1AwYN6Dml2QiP7qEkq9b93-8Crl5k5_L5vZj5CzincUKD89g2ghJyDgislroEC8FwckBGVQuVMFPSQjP6QY3IS4ycAUMaKEXmYrq1vMWSNiUOtcdlHn3zfZaarM7swwdiEwcfkbcx6lyXfZf3a15ilxTA637TxlBw500Q82_cx-Xicvk-e89nr08vkfpbbgouUU2krRR1zHEvKeCVLXtZSueEqBXJeldXcKC5qx6S1pQC0Rs5BOTRFjQJYMSaXO99l6L9WGJNufbTYNKbDfhU141JxkDCA1Q60oY8xoNPL4FsTfjQFvclMbzPTm0C0EnqbmRaD7mK_wERrGhdMZ338EzOmRME39nc7DIdnvz0GHa3HzmLtA9qk697_s-gXT-9_ow</recordid><startdate>19980518</startdate><enddate>19980518</enddate><creator>Dai, Guorui</creator><creator>Jiang, Xilan</creator><creator>Zhang, Yushu</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19980518</creationdate><title>Excimer laser deposition and characteristics of tin oxide thin films</title><author>Dai, Guorui ; Jiang, Xilan ; Zhang, Yushu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-18c591f2f6e412658464d89f090908b545ba967df28cc470eca8b09fea3de7023</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Excimer laser</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Tin oxide thin films</topic><topic>Vapor deposition</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dai, Guorui</creatorcontrib><creatorcontrib>Jiang, Xilan</creatorcontrib><creatorcontrib>Zhang, Yushu</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dai, Guorui</au><au>Jiang, Xilan</au><au>Zhang, Yushu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Excimer laser deposition and characteristics of tin oxide thin films</atitle><jtitle>Thin solid films</jtitle><date>1998-05-18</date><risdate>1998</risdate><volume>320</volume><issue>2</issue><spage>216</spage><epage>219</epage><pages>216-219</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>ArF excimer laser assisted chemical vapor deposition of tin oxide thin films on Si was obtained using SnCl 4 and O 2as precursors. Experimental measurements revealed that the deposition rate increases with incident laser energy density. The composition, structure and ultraviolet-to-visible spectra of the thin films were investigated by means of XPS, SEM, XRD and a UV–Vis techniques. It was shown that SnO 2and SnOCl 2 coexisted in the thin films, and SnOCl 2 was almost completely converted into SnO 2 after annealing. The SnO 2 thin films deposited at room temperature were amorphous in structure and the grain size of the films became larger after annealing. The transmittance of the SnO 2 thin films is above 90%, the absorption edge is 355 nm and the energy gap is 3.49 eV.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(97)01006-7</doi><tpages>4</tpages></addata></record>
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subjects Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Excimer laser
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Tin oxide thin films
Vapor deposition
title Excimer laser deposition and characteristics of tin oxide thin films
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T19%3A38%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Excimer%20laser%20deposition%20and%20characteristics%20of%20tin%20oxide%20thin%20films&rft.jtitle=Thin%20solid%20films&rft.au=Dai,%20Guorui&rft.date=1998-05-18&rft.volume=320&rft.issue=2&rft.spage=216&rft.epage=219&rft.pages=216-219&rft.issn=0040-6090&rft.eissn=1879-2731&rft.coden=THSFAP&rft_id=info:doi/10.1016/S0040-6090(97)01006-7&rft_dat=%3Cproquest_cross%3E26896080%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c367t-18c591f2f6e412658464d89f090908b545ba967df28cc470eca8b09fea3de7023%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=26896080&rft_id=info:pmid/&rfr_iscdi=true