Preparation of La2−xSrxCuO4 single-crystalline films by infrared-heated liquid phase epitaxial technique

Authors designed a new LPE technique, ir heated LPE (IR-LPE) technique, using no crucible to avoid a contamination from it. La2-xSrxCuO4 single-crystalline films were grown on the atetra-axis-orientated bulk single crystals of Zn- or Ni-doped La2CuO4 by the IR-LPE technique. La2-xSrxCuO4 single-crys...

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Bibliographic Details
Published in:Physica. C, Superconductivity Superconductivity, 2001-09, Vol.362 (1-4), p.180-185
Main Authors: Tanaka, Isao, Ashizawa, Ken, Tanabe, Hideyoshi, Watauchi, Satoshi, Yamanaka, Junji
Format: Article
Language:English
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Summary:Authors designed a new LPE technique, ir heated LPE (IR-LPE) technique, using no crucible to avoid a contamination from it. La2-xSrxCuO4 single-crystalline films were grown on the atetra-axis-orientated bulk single crystals of Zn- or Ni-doped La2CuO4 by the IR-LPE technique. La2-xSrxCuO4 single-crystalline films of the thickness 35-250 mm and of Sr content 0.08 less than or equal to x less than or equal to 0.15 were obtained. The superconducting properties in the La2-xSrxCuO4 films were improved to Tc,onset=36 K for x=0.11, which is 10 K higher than that in the La2-xSrxCuO4 bulk single crystals. 13 refs.
ISSN:0921-4534
DOI:10.1016/S0921-4534(01)00667-0