Dislocation multiplication inside contact holes

Ion implantation into contact holes has been widely used to dope the specific contact area and to reduce the contact resistance. In this study, mask edge defects were observed at the edge area of small contact holes with high aspect ratio, which resulted in multiplied dislocations penetrating into S...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronics and reliability 1999, Vol.39 (1), p.15-22
Main Authors: Hsieh, Y.F., Hwang, Y.C., Fu, J.M., Tsou, Y.M., Peng, Y.C., Chen, L.J.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ion implantation into contact holes has been widely used to dope the specific contact area and to reduce the contact resistance. In this study, mask edge defects were observed at the edge area of small contact holes with high aspect ratio, which resulted in multiplied dislocations penetrating into Si substrate for more than 0.3 μm after back-end processings. Those dislocations were identified to be Schockley partial dislocations and stair rod dislocations lying on 4 sets of inclined {111}Si planes.
ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(98)00068-7