Deuterium transport in Cu, CuCrZr, and Cu/Be

• Published in: Journal of nuclear materials 1999-03, Vol.266 (1-3), p.761-765
• Main Authors: Anderl, R.A., Hankins, M.R., Longhurst, G.R., Pawelko, R.J.
• Format: Article
• Language: English
• Subjects: Deuterium transport; Diffusion; First wall materials; Ion implantation; Permeation
• ISSN: 0022-3115; 1873-4820
• DOI: 10.1016/S0022-3115(98)00878-2

This paper presents the results of deuterium implantation/permeation experiments and TMAP4 simulations for a CuCrZr alloy, for OFHC-Cu and for a Cu/Be bi-layered structure at temperatures from 700 to 800 K. Experiments used a mass-analyzed, 3-keV D 3 + ion beam with particle flux densities of 5 × 10 19 to 7 × 10 19 D/m 2 s. Effective diffusivities and surface molecular recombination coefficients were derived giving Arrhenius pre-exponentials and activation energies for each material: CuCrZr alloy, (2.0 × 10 −2 m 2/s, 1.2 eV) for diffusivity and (2.9 × x10 −14 m 4/s, 1.92 eV) for surface molecular recombination coefficients; OFHC Cu, (2.1 × 10 −6 m 2/s, 0.52 eV) for diffusivity and (9.1 × 10 −18 m 4/s, 0.99 eV) for surface molecular recombination coefficients. TMAP4 simulation of permeation data measured for a Cu/Be bi-layer sample was achieved using a four-layer structure (Cu/BeO interface/Be/BeO back surface) and recommended values for diffusivity and solubility in Be, BeO and Cu.