Pattern transfer distortions in optical photomasks

For optical lithography to meet the high resolution and positioning accuracy required for sub-130 nm technology, it is essential to design and implement low distortion reticles. Using finite element modeling to simulate the processing steps of the optical photomask provides valuable insight into und...

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Bibliographic Details
Published in:Microelectronic engineering 2001-09, Vol.57, p.489-495
Main Authors: Mikkelson, A., Engelstad, R., Lovell, E.
Format: Article
Language:English
Subjects:
Applied sciences
Distortion
Electronics
Exact sciences and technology
Finite element modeling
Microelectronic fabrication (materials and surfaces technology)
Optical photomasks
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:For optical lithography to meet the high resolution and positioning accuracy required for sub-130 nm technology, it is essential to design and implement low distortion reticles. Using finite element modeling to simulate the processing steps of the optical photomask provides valuable insight into understanding and controlling the sources of distortion. The results presented here focus on the in-plane and out-of-plane distortions induced in the reticle due to pattern transfer, in particular illustrating how the pattern layout affects the induced image placement errors.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(01)00471-3