Epitaxial dysprosium silicide films on silicon: growth, structure and electrical properties

Dysprosium silicide layers were grown epitaxially on Si(100) and (111). Electron microscopy results showed that DySi 2− x layers grown on Si(100) have tetragonal crystalline structure and on Si(111) are hexagonal. Electrical resistivity measurements show that the two crystalline phases of DySi 2− x...

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Bibliographic Details
Published in:Thin solid films 2001-11, Vol.397 (1), p.138-142
Main Authors: Travlos, A, Salamouras, N, Boukos, N
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Electrical properties and measurements
Epitaxy
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Silicides
Transmission electron microscopy
Vacuum deposition
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Summary:Dysprosium silicide layers were grown epitaxially on Si(100) and (111). Electron microscopy results showed that DySi 2− x layers grown on Si(100) have tetragonal crystalline structure and on Si(111) are hexagonal. Electrical resistivity measurements show that the two crystalline phases of DySi 2− x are metallic and have slightly different electronic and magnetic properties.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(01)01417-1