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Equivalent transmission-line model for optically controlled microstrip slow-wave structures
This paper presents equivalent transmission‐line circuit models for an optically controlled microstrip slow‐wave MIS structure which are valid over all regions of operation, namely, lossy dielectric, slow wave, and skin effect. The models take into account both capacitance and inductance due to the...
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Published in: | Microwave and optical technology letters 2001-11, Vol.31 (4), p.292-298 |
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creator | Bhadauria, Avanish Sharma, Enakshi Khular Verma, Anand K. |
description | This paper presents equivalent transmission‐line circuit models for an optically controlled microstrip slow‐wave MIS structure which are valid over all regions of operation, namely, lossy dielectric, slow wave, and skin effect. The models take into account both capacitance and inductance due to the skin effect. The results for the phase constant (slowing factor) and attenuation by the equivalent‐circuit models compare well with those obtained by an exact wave analysis. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 292–298, 2001. |
doi_str_mv | 10.1002/mop.10015 |
format | article |
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The models take into account both capacitance and inductance due to the skin effect. The results for the phase constant (slowing factor) and attenuation by the equivalent‐circuit models compare well with those obtained by an exact wave analysis. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 292–298, 2001.</description><identifier>ISSN: 0895-2477</identifier><identifier>EISSN: 1098-2760</identifier><identifier>DOI: 10.1002/mop.10015</identifier><language>eng</language><publisher>New York: John Wiley & Sons, Inc</publisher><subject>microwave optical interacting ; optically controlled microwave devices ; slow-wave structures</subject><ispartof>Microwave and optical technology letters, 2001-11, Vol.31 (4), p.292-298</ispartof><rights>Copyright © 2001 John Wiley & Sons, Inc.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c2965-91ff19fbcc8c0dc3775445ddd67af8964ea5d66e3a4897a074b78e33c7c80e833</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Bhadauria, Avanish</creatorcontrib><creatorcontrib>Sharma, Enakshi Khular</creatorcontrib><creatorcontrib>Verma, Anand K.</creatorcontrib><title>Equivalent transmission-line model for optically controlled microstrip slow-wave structures</title><title>Microwave and optical technology letters</title><addtitle>Microw. Opt. Technol. Lett</addtitle><description>This paper presents equivalent transmission‐line circuit models for an optically controlled microstrip slow‐wave MIS structure which are valid over all regions of operation, namely, lossy dielectric, slow wave, and skin effect. The models take into account both capacitance and inductance due to the skin effect. The results for the phase constant (slowing factor) and attenuation by the equivalent‐circuit models compare well with those obtained by an exact wave analysis. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 292–298, 2001.</description><subject>microwave optical interacting</subject><subject>optically controlled microwave devices</subject><subject>slow-wave structures</subject><issn>0895-2477</issn><issn>1098-2760</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNp1kM1OwzAQhC0EEqVw4A18QuIQasdJHB9RBQWpPyAVceBguc5GMjhxaictfXtSCtw47a70zWpmELqk5IYSEo8q1-wXmh6hASUij2KekWM0ILlIozjh_BSdhfBOCGGcxwP0drfuzEZZqFvcelWHyoRgXB1ZUwOuXAEWl85j17RGK2t3WLu69c5aKHBltHeh9abBwbpttFUbwP3d6bbzEM7RSalsgIufOUQv93fL8UM0XUwex7fTSMciSyNBy5KKcqV1rkmhe19pkqRFUWRclbnIElBpkWXAVJILrghPVjwHxjTXOYGcsSG6OvxtvFt3EFrZh9BgrarBdUHGmaBCxKIHrw_g3nbwUMrGm0r5naRE7uuTfX3yu76eHR3YrbGw-x-Us8XTryI6KExo4fNPofyHzDjjqXydT-ScivFSzGfymX0BHIqDXg</recordid><startdate>20011120</startdate><enddate>20011120</enddate><creator>Bhadauria, Avanish</creator><creator>Sharma, Enakshi Khular</creator><creator>Verma, Anand K.</creator><general>John Wiley & Sons, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20011120</creationdate><title>Equivalent transmission-line model for optically controlled microstrip slow-wave structures</title><author>Bhadauria, Avanish ; Sharma, Enakshi Khular ; Verma, Anand K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2965-91ff19fbcc8c0dc3775445ddd67af8964ea5d66e3a4897a074b78e33c7c80e833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>microwave optical interacting</topic><topic>optically controlled microwave devices</topic><topic>slow-wave structures</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bhadauria, Avanish</creatorcontrib><creatorcontrib>Sharma, Enakshi Khular</creatorcontrib><creatorcontrib>Verma, Anand K.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microwave and optical technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bhadauria, Avanish</au><au>Sharma, Enakshi Khular</au><au>Verma, Anand K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Equivalent transmission-line model for optically controlled microstrip slow-wave structures</atitle><jtitle>Microwave and optical technology letters</jtitle><addtitle>Microw. Opt. Technol. Lett</addtitle><date>2001-11-20</date><risdate>2001</risdate><volume>31</volume><issue>4</issue><spage>292</spage><epage>298</epage><pages>292-298</pages><issn>0895-2477</issn><eissn>1098-2760</eissn><abstract>This paper presents equivalent transmission‐line circuit models for an optically controlled microstrip slow‐wave MIS structure which are valid over all regions of operation, namely, lossy dielectric, slow wave, and skin effect. The models take into account both capacitance and inductance due to the skin effect. The results for the phase constant (slowing factor) and attenuation by the equivalent‐circuit models compare well with those obtained by an exact wave analysis. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 292–298, 2001.</abstract><cop>New York</cop><pub>John Wiley & Sons, Inc</pub><doi>10.1002/mop.10015</doi><tpages>7</tpages></addata></record> |
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subjects | microwave optical interacting optically controlled microwave devices slow-wave structures |
title | Equivalent transmission-line model for optically controlled microstrip slow-wave structures |
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