Order and disorder in epitaxially grown CuInS sub(2)

This study investigates the ordering effects which occur on the cation sublattice of the CuInS sub(2) compound. CuInS sub(2) is grown on single-crystalline silicon substrates of (001) orientation. The ordered, sulfur-terminated surface Si(001)(1 x 1)-S constitutes well-defined starting conditions fo...

Full description

Saved in:
Bibliographic Details
Published in:Thin solid films 2001-05, Vol.387 (1-2), p.83-85
Main Authors: Hahn, T, Metzner, H, Plikat, B, Seibt, M
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This study investigates the ordering effects which occur on the cation sublattice of the CuInS sub(2) compound. CuInS sub(2) is grown on single-crystalline silicon substrates of (001) orientation. The ordered, sulfur-terminated surface Si(001)(1 x 1)-S constitutes well-defined starting conditions for the epitaxial growth process using molecular beams. The silicon surfaces and epitaxial CuInS sub(2) films are characterized in situ by means of Auger electron spectroscopy and low-energy electron diffraction. X-Ray diffraction, and transmission electron microscopy are employed for an ex situ structural characterization. We demonstrate the coexistence of CuAu-type ordering and disorder and a complete absence of the equilibrium chalcopyrite order. CuInS sub(2) with the tetragonal CuAu structure is shown to grow exclusively in c-axis direction. copyright 2001 Elsevier Science B.V.
ISSN:0040-6090