Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor

The origin of the radiative recombination leading to yellow luminescence (YL) has been elucidated by the study of luminescence properties of GaN films grown with two different gas feeding methods. GaN films were grown on a (0001) sapphire substrate in a rapid thermal chemical vapor deposition (RTCVD...

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Bibliographic Details
Published in:Journal of electronic materials 1999-08, Vol.28 (8), p.970-974
Main Authors: SUN JUNG KIM, YOUNG HUN SEO, KEE SUK NAHM, YUN BONG HAHN, HYUN WOOK SHIM, SUH, E.-K, KEE YOUNG LIM, HYUNG JAE LEE
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Iii-v semiconductors
Luminescence
Optical properties
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Radiative recombination
Sapphire
Substrates
Vapor phases
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Summary:The origin of the radiative recombination leading to yellow luminescence (YL) has been elucidated by the study of luminescence properties of GaN films grown with two different gas feeding methods. GaN films were grown on a (0001) sapphire substrate in a rapid thermal chemical vapor deposition (RTCVD) reactor. GaN films emitted two different luminescence energies, 2.2 and 3.47 eV, depending on the introducing position of hydrogen gas in the growth reactor. The distribution of the TMGa flow and gas phase reactions in the reactor were investigated to understand the effect of the gas feeding methods on the optical properties of GaN films. The results suggest that YL is related to Ga vacancies in the grown films.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-999-0206-8