Suppression of Plasma Charging Damage in Sub-Micron Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with Gate Oxynitride by Two-Step Nitridation

The two-step nitridation process of gate oxynitride in metal-oxide-semiconductor Field-Effect Transistors (MOSFETs) is utilized to demonstrate good electrical reliability in MOSFETs. The low temperature and short time of the second nitridation step can form a nitrogen pile-up at the poly-Si/oxynitri...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2001-06, Vol.40 (6A), p.L536-L538
Main Authors: Tzeng, Pei-Jer, Wu, Bone-Fung, Chang-Liao, Kuei-Shu
Format: Article
Language:English
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Summary:The two-step nitridation process of gate oxynitride in metal-oxide-semiconductor Field-Effect Transistors (MOSFETs) is utilized to demonstrate good electrical reliability in MOSFETs. The low temperature and short time of the second nitridation step can form a nitrogen pile-up at the poly-Si/oxynitride interface which leads to the reduction of detrimental species diffused from poly-Si to the oxynitride. This process reduces the plasma-charging damage even more as the charging effect is increased. Smaller characteristic degradation due to nitrogen pile-up at both sides of the gate oxynitride ensures better gate oxynitride integrity (GOI) in practical integration for ultra-large-scaled integration (ULSI) applications.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.L536