SCINTILLATION CHARACTERISTICS AND RADIATION DAMAGE OF Ce-DOPED Bi4Si3O12 SINGLE CRYSTALS

Authors have analyzed the scintillation characteristics such as light yield and decay time and the radiation damage of Ce-doped Bi4Si3O12 (BSO) single crystals grown by the vertical Bridgman method. Ce was doped into BSO at 0.1, 0.2, and 0.4 at.%, and the grown crystals were analyzed. For the Ce dop...

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Published in:Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 3A, pp. 1360-1366. 2001 Part 1. Vol. 40, no. 3A, pp. 1360-1366. 2001, 2001, Vol.40 (3A), p.1360-1366
Main Authors: Harada, K, Ishii, M, Senguttuvan, N, Kobayashi, M, Nikl, M, Feng, X-Q
Format: Article
Language:English
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Summary:Authors have analyzed the scintillation characteristics such as light yield and decay time and the radiation damage of Ce-doped Bi4Si3O12 (BSO) single crystals grown by the vertical Bridgman method. Ce was doped into BSO at 0.1, 0.2, and 0.4 at.%, and the grown crystals were analyzed. For the Ce doping at 0.1 at.%, the light yield decreased by 40%, while the average decay constant decreased by 20% (from 105 to 86 ns). Radiation damage was assessed by measuring the optical transmittance before and after irradiating the crystals with 60Co gamma-rays for a maximum accumulated dose of 107 rad. Significant improvement was found for the radiation hardness of Ce-doped BSO. 18 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.40.1360