Effect of the loaded quality factor on power efficiency for CMOS class-E RF tuned power amplifiers

An analytical expression for the harmonic distortion and power efficiency for class-E power amplifiers is derived. By considering the nonideal behavior of the switching device, we explore the dependence of power efficiency on the quality factor of the resonant circuit, as well as the current decay a...

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Bibliographic Details
Published in:IEEE transactions on circuits and systems. 1, Fundamental theory and applications Fundamental theory and applications, 1999-05, Vol.46 (5), p.628-634
Main Authors: Hung-Lung Tu, S., Toumazou, C.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit simulation
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Harmonic distortion
High power amplifiers
Inductors
Integrated circuits
Power amplifiers
Q factor
Radio frequency
Radiofrequency amplifiers
RLC circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Switching circuits
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Summary:An analytical expression for the harmonic distortion and power efficiency for class-E power amplifiers is derived. By considering the nonideal behavior of the switching device, we explore the dependence of power efficiency on the quality factor of the resonant circuit, as well as the current decay angle of the active device. The result is very useful since it predicts the power efficiency in terms of circuit parameters. The analytical expression is supported by good agreement with circuit simulations.
ISSN:1057-7122
1558-1268
DOI:10.1109/81.762928