Growth structure and properties of Fe rich Fe-Ni alloy films deposited on MgO(001) by d.c.-biased plasma-sputtering

Ni-Fe alloy films of about 100 nm in thickness were deposited on MgO(001) substrates at 250°C by d.c. plasma sputtering at 2.5 kV in pure Ar gas by applying a Ni 0.3Fe 0.7(Invar) or Ni 0.2Fe 0.8 target. A d.c. bias voltage V s between 0 and −180 V was applied to the substrate during deposition. The...

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Bibliographic Details
Published in:Thin solid films 1999-06, Vol.347 (1), p.85-90
Main Authors: Yang, Jiping, Barna, Arpad, Makihara, Kenji, Hashimoto, Mituru, Barna, Peter B.
Format: Article
Language:English
Subjects:
Applied sciences
Cross sectional transmission electron microscopy
Cross-disciplinary physics: materials science
rheology
Deposition by sputtering
Epitaxial growth
Exact sciences and technology
Materials science
Metals. Metallurgy
Methods of deposition of films and coatings
film growth and epitaxy
NiFe Invar
Physics
Saturation magnetization
Sputtering
Temperature coefficient of resistance
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Summary:Ni-Fe alloy films of about 100 nm in thickness were deposited on MgO(001) substrates at 250°C by d.c. plasma sputtering at 2.5 kV in pure Ar gas by applying a Ni 0.3Fe 0.7(Invar) or Ni 0.2Fe 0.8 target. A d.c. bias voltage V s between 0 and −180 V was applied to the substrate during deposition. The structure and composition of the films were investigated by X-ray photoelectron spectroscopy (XPS), and by cross sectional transmission electron microscopy (XTEM). The resistance, its temperature coefficient TCR (150 to 300K) and saturation magnetization 4 πMs at 300 K were measured as a function of V s. With the use of Ni 0.3Fe 0.7 target, Ni 1− x Fe x films with x between 0.68±0.03 and 0.73±0.03, can be prepared where x was weakly dependent on V s. The film is epitaxially grown mainly with FCC-NiFe(001)[010]∥MgO(001)[010] accompanied with the initial thin layer of about 5 to 10 nm in thickness with BCC-NiFe(001)[110]∥MgO(001)[100] at the interface at V s values studied. Maximum TCR and minimum resistance are observed between V s=−120 to −160 V. 4 πMs takes greater value at V s≥120 V. In the case of Ni 0.2Fe 0.8 target at V s=−120 V, Ni 1− x Fe x films with x=0.80±0.03 are entirely grown in a BCC structure with NiFe(001)[110]∥MgO(001)[100].
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(98)01731-3