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GaN-Based Laser Diodes Processed by Annealing with Minority-Carrier Injection
Minority-carrier injection was used to activate the acceptor dopant of GaN-based laser diodes. Lasing was observed in samples treated at temperatures above 350°C. The threshold current and current density were 690 mA and 13.8 kA/cm 2 , respectively. The lasing characteristic was slightly better than...
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Published in: | Japanese Journal of Applied Physics 1999-11, Vol.38 (11A), p.L1237-L1239 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Minority-carrier injection was used to activate the acceptor
dopant of GaN-based laser diodes. Lasing was observed in samples
treated at temperatures above 350°C. The threshold current
and current density were 690 mA and 13.8 kA/cm
2
,
respectively. The lasing characteristic was slightly better than that
of devices fabricated by conventional thermal annealing. The devices
were repassivated by additional annealing in an open-circuit
configuration, and then reactivated by the present method. Laser
oscillation was obtained on the “reactivated” samples with no
significant change in threshold current. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.38.L1237 |