Self-Consistent Calculations of Performance Parameters in Highly Doped Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

The inversion-layer mobility, gate capacitance, transconductance and threshold voltage in highly doped silicon-on-insulator (SOI) n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been investigated for various SOI layer thicknesses ( t SOI ) using self-consistent calculatio...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2001-02, Vol.40 (2A), p.L100-L103
Main Author: Iwata, Hideyuki
Format: Article
Language:English
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Summary:The inversion-layer mobility, gate capacitance, transconductance and threshold voltage in highly doped silicon-on-insulator (SOI) n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been investigated for various SOI layer thicknesses ( t SOI ) using self-consistent calculations. It has been found for SOI MOSFETs with highly doped channels that, whenever t SOI (\gtrsim2 nm) is reduced under the full-depletion condition, the current drive of SOI MOSFETs becomes higher than that of bulk MOSFETs because of the increase in the inversion-layer mobility. In such SOI MOSFETs, the total scattering rate of phonon and ionized impurity scatterings becomes lower with decreasing t SOI . These results are different from those of the previous work for SOI MOSFETs with low channel impurity concentration.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.L100