High-Temperature Creep and Microstructural Evolution of Chemically Vapor-Deposited Silicon Carbide Fibers

The creep behavior of three types of silicon carbide fibers that have been fabricated via chemical vapor deposition is described. The fibers exhibit only primary creep over the range of conditions studied (1200°–1400°C, 190–500 MPa). A transmission electron microscopy study of the microstructural de...

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Published in:Journal of the American Ceramic Society 1999-02, Vol.82 (2), p.407-413
Main Authors: Lewinsohn, Charles A., Giannuzzi, Lucille A., Bakis, Charles E., Tressler, Richard E.
Format: Article
Language:English
Subjects:
Applied sciences
Building materials. Ceramics. Glasses
Ceramic and carbon fibers
Ceramic industries
Chemical industry and chemicals
Exact sciences and technology
Technical ceramics
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description The creep behavior of three types of silicon carbide fibers that have been fabricated via chemical vapor deposition is described. The fibers exhibit only primary creep over the range of conditions studied (1200°–1400°C, 190–500 MPa). A transmission electron microscopy study of the microstructural development that is induced by the creep deformation of SCS‐6 silicon carbide fibers at 1400°C is presented. Significant grain growth occurs in all silicon carbide regions of the fiber during creep, in contrast to the reasonably stable microstructure that is observed after annealing at the same temperature and time.
doi_str_mv 10.1111/j.1551-2916.1999.tb20077.x
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source Wiley-Blackwell Read & Publish Collection
subjects Applied sciences
Building materials. Ceramics. Glasses
Ceramic and carbon fibers
Ceramic industries
Chemical industry and chemicals
Exact sciences and technology
Technical ceramics
title High-Temperature Creep and Microstructural Evolution of Chemically Vapor-Deposited Silicon Carbide Fibers
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