High-quality n-Si/i-p+-i SiGe/n-Si structure grown by ultra high vacuum chemical molecular epitaxy

The n-Si/i-p^sup +^-i SiGe/n-Si structure was grown by ultra high vacuum chemical molecular epitaxy, and analysed by high resolution X-ray diffraction, cross-sectional transmission electron microscopy, and secondary ion mass spectroscopy. A high-quality SiGe base layer with an abrupt interface to th...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 1999-09, Vol.10 (7), p.525-528
Main Authors: Zhang, Jinshu, Jia, Hongyong, Chen, Peiyi, Tsien, Pei-hsin, Feng, M X, Lin, Q Y, Lo, Tai-chin
Format: Article
Language:English
Subjects:
Mineralogy
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Summary:The n-Si/i-p^sup +^-i SiGe/n-Si structure was grown by ultra high vacuum chemical molecular epitaxy, and analysed by high resolution X-ray diffraction, cross-sectional transmission electron microscopy, and secondary ion mass spectroscopy. A high-quality SiGe base layer with an abrupt interface to the Si was obtained. No defects were observed in the n-Si/i-p^sup +^-i SiGe/n-Si structure. Both the Ge and boron atoms are uniformly distributed in the p^sup +^-SiGe layer, and the changes of profile of both boron and Ge atoms are abrupt from the n-Si to the SiGe layer. A high-performance microwave power SiGe heterojunction bipolar transistor (HBT) was made from the n-Si/i-p^sup +^-i SiGe/n-Si structure. Therefore, device-quality n-Si/i-p^sup +^-i SiGe/n-Si structures can be grown by ultra high vacuum chemical molecular epitaxy.[PUBLICATION ABSTRACT]
ISSN:0957-4522
1573-482X
DOI:10.1023/A:1008988321054