Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss for mobile communication systems

An extremely low loss switch IC has been implemented by using a 0.15 /spl mu/m-gate super self-aligned FET with reduced drain/source area. Both off-state-capacitance and the specific on-resistance of the implemented FET have been dramatically reduced by the novel device structure. The experimentally...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2001-08, Vol.48 (8), p.1510-1514
Main Authors: Makioka, S., Anda, Y., Miyatsuji, K., Ueda, D.
Format: Article
Language:English
Subjects:
Devices
Drains
Gallium arsenide
Gallium compounds
Insertion loss
Integrated circuits
Mobile communication systems
Noise levels
Switches
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Summary:An extremely low loss switch IC has been implemented by using a 0.15 /spl mu/m-gate super self-aligned FET with reduced drain/source area. Both off-state-capacitance and the specific on-resistance of the implemented FET have been dramatically reduced by the novel device structure. The experimentally fabricated switch IC showed the low insertion loss of 0.25 dB at an added power of 35 dBm at a frequency of 0.9 GHz, which is the lowest value ever reported.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.936499