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Hard a-C:H films deposited at high deposition rates

In this work, we present hard-hydrogenated amorphous carbon films at high deposition rate. The films were prepared on the cathode electrode of a conventional r.f. sputtering system. Hydrogenated amorphous carbon films with excellent properties, i.e, high hardness (15 GPa), relatively low stress (~ 1...

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Bibliographic Details
Published in:Thin solid films 1999, Vol.343, p.222-225
Main Authors: Marques, F.C., Lacerda, R.G., de Lima, M.M., Vilcarromero, J.
Format: Article
Language:English
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Summary:In this work, we present hard-hydrogenated amorphous carbon films at high deposition rate. The films were prepared on the cathode electrode of a conventional r.f. sputtering system. Hydrogenated amorphous carbon films with excellent properties, i.e, high hardness (15 GPa), relatively low stress (~ 1.3 GPa) and with a very high deposition rate (~0.7 nm/s) were obtained at the conditions of high bias (−800 V) and high methane gas pressure (0.12 × 10 −1 mbar). The low band gap and the high I D/ I G Raman ratio indicate that the films have high amount of sp 2 sites.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(98)01630-7