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Hard a-C:H films deposited at high deposition rates
In this work, we present hard-hydrogenated amorphous carbon films at high deposition rate. The films were prepared on the cathode electrode of a conventional r.f. sputtering system. Hydrogenated amorphous carbon films with excellent properties, i.e, high hardness (15 GPa), relatively low stress (~ 1...
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Published in: | Thin solid films 1999, Vol.343, p.222-225 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In this work, we present hard-hydrogenated amorphous carbon films at high deposition rate. The films were prepared on the cathode electrode of a conventional r.f. sputtering system. Hydrogenated amorphous carbon films with excellent properties, i.e, high hardness (15 GPa), relatively low stress (~ 1.3 GPa) and with a very high deposition rate (~0.7 nm/s) were obtained at the conditions of high bias (−800 V) and high methane gas pressure (0.12 × 10
−1 mbar). The low band gap and the high
I
D/
I
G Raman ratio indicate that the films have high amount of sp
2 sites. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/S0040-6090(98)01630-7 |