Structural variations in polysilicon, associated with deposition temperature and degree of anneal

Raman microscopy has been used to investigate the structure of as deposited and annealed polysilicon films formed by low-pressure chemical vapour deposition. The films were deposited between 620°C and 570°C, and the effects of various thermal annealing conditions on these samples is reported. Compon...

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Bibliographic Details
Published in:Journal of materials science 2001, Vol.36 (1), p.207-212
Main Authors: PARR, A. A, GARDINER, D. J, CARLINE, R. T, KING, D. O, WILLIAMS, G. M
Format: Article
Language:English
Subjects:
Annealing
Chemical vapor deposition
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low pressure
Materials science
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Wavelengths
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Summary:Raman microscopy has been used to investigate the structure of as deposited and annealed polysilicon films formed by low-pressure chemical vapour deposition. The films were deposited between 620°C and 570°C, and the effects of various thermal annealing conditions on these samples is reported. Components of the polysilicon Raman bands have been categorised according to their wavenumber position and FWHM values. It has been shown that the degree and nature of change in material structure, is dependent upon: the starting material selected, the anneal temperature, and the anneal time.
ISSN:0022-2461
1573-4803
DOI:10.1023/A:1004817809865