The effect of additional methane during the annealing process on diamond nucleation on polished polycrystalline nickel substrates

The density and quality of diamond nuclei on nickel substrates are greatly enhanced by additional CH 4 in the high-temperature annealing process. If we increase the concentration of CH 4 from 0.5 to 2.5% in this process, the quality of diamond nuclei will be improved, in which the 1.5% CH 4 concentr...

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Bibliographic Details
Published in:Applied surface science 2001-11, Vol.183 (3), p.173-181
Main Authors: Fei, Y.J., Wang, Xuejin, Wang, Xue, Xiong, Yanyun, Feng, Kean
Format: Article
Language:English
Subjects:
Annealing process
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
CVD
Diamond
Diamonds
Exact sciences and technology
Materials science
Methane
Methods of deposition of films and coatings
film growth and epitaxy
Nickel
Nucleation
Physics
Substrates
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Summary:The density and quality of diamond nuclei on nickel substrates are greatly enhanced by additional CH 4 in the high-temperature annealing process. If we increase the concentration of CH 4 from 0.5 to 2.5% in this process, the quality of diamond nuclei will be improved, in which the 1.5% CH 4 concentration is found to be the best fit for diamond to nucleate on nickel substrates. During the annealing step with the 1.5% CH 4 concentration, the density of diamond nuclei is up to 3×10 8/cm 2, higher than the density of nuclei on nickel substrates in previous works and the quality of diamond is nice.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(01)00544-X