The electromagnetic shielding effectiveness of indium tin oxide films

• Published in: Ceramics international 2001, Vol.27 (3), p.363-365
• Main Authors: Huang, J.L., Yau, B.S., Chen, C.Y., Lo, W.T., Lii, D.F.
• Format: Article
• Language: English
• Subjects: A. Films; C. Electrical conductivity; C. Magnetic properties; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Indium tin oxide; Low-field transport and mobility; piezoresistance; Physics
• ISSN: 0272-8842; 1873-3956
• DOI: 10.1016/S0272-8842(00)00088-2

Indium tin oxide (ITO) films were deposited on acrylics by low temperature reactive magnetron sputtering. The influence of film thickness on the shielding effectiveness of the films was investigated. The electric conductivity increased with ITO film thickness. This is probably due to the scattering of charge carriers by the external surfaces of thin films which is higher for films with smaller thickness. Results of magnetic moment versus magnetic field suggested that ITO film is basically a non-magnetic material. An increase in reflection loss with film thickness was observed, which was very similar to that observed for the electrical conductivity. The absorption loss was extremely small when compared with the reflection loss and therefore could be neglected when considering the total shielding effectiveness.