Modeling of the kinetics of dislocation loops

The precipitation of excess silicon interstitials into dislocation loops is modeled. This situation occurs when an amorphous layer is created at the surface in order to avoid boron channeling and form shallow p junctions. The modeling of the nucleation of these extended defects is included into the...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1999, Vol.147 (1), p.13-17
Main Authors: Lampin, E., Senez, V.
Format: Article
Language:English
Subjects:
Boron anomalous diffusion
Dislocation loops
Nucleation
Process simulation
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Summary:The precipitation of excess silicon interstitials into dislocation loops is modeled. This situation occurs when an amorphous layer is created at the surface in order to avoid boron channeling and form shallow p junctions. The modeling of the nucleation of these extended defects is included into the process simulator IMPACT-4. Their density and mean radius are calculated for several annealing times and temperatures and they are compared with experimental characterizations. This is the first step towards a full modeling of the complex processes involved in the transient enhanced diffusion of boron.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(98)00599-0