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Electric field and temperature dependence of the stress induced leakage current: Fowler–Nordheim or Schottky emission?
The mechanism for the stress induced leakage current remains controversial. The aim of this work is to study the temperature dependence of the stress induced leakage current of 5.5 and 4 nm thick SiO 2 oxides. From these temperature measurements an activation energy is extracted. By simulating the t...
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Published in: | Journal of non-crystalline solids 1999-04, Vol.245 (1), p.48-53 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The mechanism for the stress induced leakage current remains controversial. The aim of this work is to study the temperature dependence of the stress induced leakage current of 5.5 and 4 nm thick SiO
2 oxides. From these temperature measurements an activation energy is extracted. By simulating the temperature dependence of the stress induced leakage current it is demonstrated that only a Schottky-like thermionic emission law can fit simultaneously the dependence of the gate current and of the activation energy with gate voltage. |
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ISSN: | 0022-3093 1873-4812 |
DOI: | 10.1016/S0022-3093(98)00853-9 |