Lattice relaxation in heavily In-doped CdTe films

Heavily In-doped CdTe is a system that exhibits deep-level formation and persistent photoconductivity (PPC). The existence of PPC has been related to the appearance of lattice relaxations by some theoretical models. In-doped CdTe is a good candidate for the observation of lattice relaxations created...

Full description

Saved in:
Bibliographic Details
Published in:Journal of materials science letters 1999-01, Vol.18 (2), p.153-155
Main Authors: CASTRO-RODRIGUEZ, R, ZAPATA-NAVARRO, A, ZAPATA-TORRES, M, PENA, J. L
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities: doping, implantation, distribution, concentration, etc
Exact sciences and technology
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Heavily In-doped CdTe is a system that exhibits deep-level formation and persistent photoconductivity (PPC). The existence of PPC has been related to the appearance of lattice relaxations by some theoretical models. In-doped CdTe is a good candidate for the observation of lattice relaxations created by the introduction of In. In this letter, we report the results of contributions to the variation of the lattice parameter relaxation to explain the very important effect of substitutional In incorporation in CdTe films.
ISSN:0261-8028
DOI:10.1023/A:1006626821383