Microstructure analyses of the titanium films formed by the ionized sputtering process

• Published in: Thin solid films 1999-02, Vol.340 (1), p.13-17
• Main Authors: Ko, Dae-Hong, Kim, Eun-Ha, Choi, Siyoung, Yoo, Bong-Young, Lee, Hyeon-Deok
• Format: Article
• Language: English
• Subjects: Amorphous interlayer; Applied sciences; Collimated sputtering; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Exact sciences and technology; Ionized sputtering process; Materials science; Metals. Metallurgy; Methods of deposition of films and coatings; film growth and epitaxy; Microstructure; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Ti films
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(98)01428-X

We investigated the microstructure of the Ti-films formed on the (001) single crystal silicon wafers through the ionized sputtering process, and compared the results with those obtained by collimated sputtering. We found that the Ti-films created by ionized sputtering process without the substrate bias show less strong (002) textures than collimated sputtering. The Ti-films created by the ionized sputtering process with the substrate bias did not show any observable strong textures. We also found that the ionized sputtering processed Ti-films show about 4 nm thick amorphous Ti–Si interlayer, which is much thicker than that of the collimated sputtering process. The modifications of the microstructure of Ti-films are attributed to the ion bombardments during the ionized sputtering deposition process.