Multiple Andreev reflections in ballistic Nb-InGaAs/InP-Nb junctions

The current–voltage characteristics of ballistic Nb-InGaAs/InP-Nb Josephson junctions have been investigated. At temperatures below 1 K a negative differential conductance, which usually leads to a hysteresis in the current–voltage characteristics, was resolved by connecting an additional external s...

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Bibliographic Details
Published in:Superlattices and microstructures 1999-05, Vol.25 (5-6), p.851-859
Main Authors: Schäpers, Th, Neurohr, K., Malindretos, J., Kaluza, A., Picard, J.-M., Lüth, H.
Format: Article
Language:English
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Summary:The current–voltage characteristics of ballistic Nb-InGaAs/InP-Nb Josephson junctions have been investigated. At temperatures below 1 K a negative differential conductance, which usually leads to a hysteresis in the current–voltage characteristics, was resolved by connecting an additional external shunt resistor to the junction. The negative differential conductance is explained by heating and conductance enhancement due to multiple Andreev reflections. The structures observed in the differential resistance measurements as a function of the bias voltage are explained by self-detection of Josephson radiation at low bias voltages and subharmonic gap structures at higher bias voltages.
ISSN:0749-6036
1096-3677
DOI:10.1006/spmi.1999.0728