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Measurements of quantized conductance in gallium as a function of temperature
Using a scanning tunneling microscope in a large number of approach and retraction experiments, quantized conductance is observed for the first time in gallium. We compare the conductance quantization at temperatures between 300 and 4.2 K, just slightly below and far below the bulk melting point of...
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Published in: | Solid state communications 1999-02, Vol.109 (8), p.525-530 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Using a scanning tunneling microscope in a large number of approach and retraction experiments, quantized conductance is observed for the first time in gallium. We compare the conductance quantization at temperatures between 300 and 4.2
K, just slightly below and far below the bulk melting point of gallium. We find that the conductance is significantly dependent on temperature and find a moderate conductance peak at 1
G
o (2
e
2/
h) that increases in intensity with decreasing temperature. At 4.2
K, a second conductance peak at 2
G
o is observed. We attribute our observations to gallium’s unique orthorhombic crystal structure and a significant increase in atomic disorder at temperatures near the melting point. |
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ISSN: | 0038-1098 1879-2766 |
DOI: | 10.1016/S0038-1098(98)00607-3 |