NO sub(2) sensor based on InP epitaxial thin layers

n-InP epitaxial thin layers are exposed to concentrations of a diluted oxidizing gas: NO sub(2). In the presence of this gas, the resistance measured parallel to the surface of the InP layer, between ohmic contacts, increases. The magnitude of its variations depends on several parameters: the operat...

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Published in:Thin solid films 1999-01, Vol.348 (1), p.266-272
Main Authors: Battut, V, Blanc, J P, Goumet, E, Souliere, V, Monteil, Y
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Language:English
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container_title Thin solid films
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creator Battut, V
Blanc, J P
Goumet, E
Souliere, V
Monteil, Y
description n-InP epitaxial thin layers are exposed to concentrations of a diluted oxidizing gas: NO sub(2). In the presence of this gas, the resistance measured parallel to the surface of the InP layer, between ohmic contacts, increases. The magnitude of its variations depends on several parameters: the operating temperature, the thickness and the doping concentration level of the InP layer, and the gas concentration. A theoretical model of the action of the gas is proposed, mixing chemisorption equilibrium and surface field effect. The experimental results are in agreement with the theoretical predictions.
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title NO sub(2) sensor based on InP epitaxial thin layers
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