Total-dose effects in double-gate-controlled NPN bipolar transistors

The sensitivity to radiation-induced degradation of new double-gate-controlled lateral NPN bipolar transistors has been investigated. The radiation hardness is improved when the device is working in the accumulation mode. The effect of positive charge and increased surface recombination velocity is...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2001-10, Vol.48 (5), p.1694-1699
Main Authors: Vandooren, A., Yuan, J., Flandre, D., Colinge, J.P.
Format: Article
Language:English
Subjects:
Analytical models
Bipolar transistors
Charge
Degradation
Devices
Etching
Laboratories
Microelectronics
MOSFETs
Radiation effects
Radiation hardness
Semiconductor devices
Semiconductor films
Silicon
Simulation
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Summary:The sensitivity to radiation-induced degradation of new double-gate-controlled lateral NPN bipolar transistors has been investigated. The radiation hardness is improved when the device is working in the accumulation mode. The effect of positive charge and increased surface recombination velocity is analyzed by means of device simulations and experimental results.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.960359