Temperature dependence of turn-on processes in 4H–SiC thyristors

In silicon carbide (SiC) thyristors, the turn-on time decreases with increasing temperature. Experimental data for 400–800 V and 2.6 kV 4H–SiC thyristors are analyzed. A qualitative analysis, analytical calculations, and computer simulations have been made to clarify the origin of this effect. It is...

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Bibliographic Details
Published in:Solid-state electronics 2001-03, Vol.45 (3), p.453-459
Main Authors: Levinshtein, Michael E, Mnatsakanov, Tigran T, Ivanov, Pavel A, Agarwal, Anant K, Palmour, John W, Rumyantsev, Sergey L, Tandoev, Aleksey G, Yurkov, Sergey N
Format: Article
Language:English
Subjects:
Silicon carbide
Switch-on process
Thyristors
Transient processes
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Summary:In silicon carbide (SiC) thyristors, the turn-on time decreases with increasing temperature. Experimental data for 400–800 V and 2.6 kV 4H–SiC thyristors are analyzed. A qualitative analysis, analytical calculations, and computer simulations have been made to clarify the origin of this effect. It is shown that the temperature ionization of the Al dopant in the p +-emitter is mainly responsible for the effect. The hole concentration in the p +-emitter grows sharply with increasing temperature, making larger the injection coefficient of the p +–n junction. The role played by the temperature dependence of the carrier lifetime in the p +-emitter is demonstrated.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(01)00039-9