Transport mechanisms in hydrogenated microcrystalline silicon

Transport properties of microcrystalline (μc-Si/H) and polycrystalline (p-Si) silicon films are analyzed by time resolved microwave conductivity (TRMC), diffusion-induced TRMC (DTRMC), and Hall measurements. The comparison of carrier mobilities in microcrystalline silicon determined by TRMC as well...

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Bibliographic Details
Published in:Thin solid films 2001-02, Vol.383 (1-2), p.53-56
Main Authors: Brenot, R., Vanderhaghen, R., Drévillon, B., Roca i Cabarrocas, P., Rogel, R., Mohammed-Brahim, T.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Grain boundaries
Low-field transport and mobility
piezoresistance
Microcrystalline silicon
Physics
Transport
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Summary:Transport properties of microcrystalline (μc-Si/H) and polycrystalline (p-Si) silicon films are analyzed by time resolved microwave conductivity (TRMC), diffusion-induced TRMC (DTRMC), and Hall measurements. The comparison of carrier mobilities in microcrystalline silicon determined by TRMC as well as DTRMC shows that trapping in the disordered part of these films is not the main limiting parameter for transport in microcrystalline silicon. Besides, it is demonstrated that TRMC measurements are not sensitive to barriers between the crystallites. Our measurements reveal that, contrary to the case of p-Si, the influence of barriers in μc-Si/H can be neglected. Transport in μc-Si/H is consequently mainly limited by defects inside the crystallites.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(00)01791-0