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A 125 mm super(2) 1 Gb NAND flash memory with 10 MB/s program throughput

A 125 mm super(2) 1 Gb NAND flash memory with 10 MB/s program throughput was presented. The 1 Gb flash has the highest memory density among 2LC memories and the highest cell/chip efficiency among flash memories. Two techniques were adopted in the architecture for reducing the chip size, the number o...

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Bibliographic Details
Published in:Digest of technical papers - IEEE International Solid-State Circuits Conference 2002-01, p.82-83+411
Main Authors: Nakamura, Hiroshi, Imamiya, Kenichi, Himeno, Toshihiko, Yamamura, Toshio, Ikehashi, Tamio, Takeuchi, Ken, Kanda, Kazushige, Hosono, Koji, Futatsuyama, Takuya, Kawai, Koichi, Shirota, Riichiro, Arai, Norihisa, Arai, Fumitaka, Hatakeyama, Kazuo, Hazama, Hiroaki
Format: Article
Language:English
Online Access:Get full text
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Summary:A 125 mm super(2) 1 Gb NAND flash memory with 10 MB/s program throughput was presented. The 1 Gb flash has the highest memory density among 2LC memories and the highest cell/chip efficiency among flash memories. Two techniques were adopted in the architecture for reducing the chip size, the number of memory cells in a NAND string was changed to 32 and each word line (WL) crossed (1024+32)x16 bit lines.
ISSN:0193-6530