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A 125 mm super(2) 1 Gb NAND flash memory with 10 MB/s program throughput
A 125 mm super(2) 1 Gb NAND flash memory with 10 MB/s program throughput was presented. The 1 Gb flash has the highest memory density among 2LC memories and the highest cell/chip efficiency among flash memories. Two techniques were adopted in the architecture for reducing the chip size, the number o...
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Published in: | Digest of technical papers - IEEE International Solid-State Circuits Conference 2002-01, p.82-83+411 |
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Main Authors: | , , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Online Access: | Get full text |
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Summary: | A 125 mm super(2) 1 Gb NAND flash memory with 10 MB/s program throughput was presented. The 1 Gb flash has the highest memory density among 2LC memories and the highest cell/chip efficiency among flash memories. Two techniques were adopted in the architecture for reducing the chip size, the number of memory cells in a NAND string was changed to 32 and each word line (WL) crossed (1024+32)x16 bit lines. |
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ISSN: | 0193-6530 |