Tin-doped indium oxide (ITO) film deposition by ion beam sputtering

• Published in: Solar energy materials and solar cells 2001, Vol.65 (1), p.211-218
• Main Authors: Han, Younggun, Kim, Donghwan, Cho, Jun-Sik, Koh, Seok-Keun, Song, Yo Seung
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Ion beam sputtering; ITO; Low substrate temperature; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Other inorganic semiconductors; Other semiconductors; Physics
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/S0927-0248(00)00097-0

Indium tin oxide (ITO) thin films were deposited by ion beam sputtering. This paper aimed at the reach of high conductivity and high transmittance simultaneously at relatively low substrate temperature. In order to reach the objects, the influences of substrate temperature, ion beam energy, and oxygen gas flowing rate on the properties of deposited ITO films were investigated. Resistivity showed the lowest value of 1.5×10 −4 Ω cm on the films deposited by 1.3 keV Ar ions at 100°C. The microstructure of the films was sub-grain (domain) structure. The ITO films have above 80% of transmittance in the visible wavelength including that of the glass substrate.