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Tin-doped indium oxide (ITO) film deposition by ion beam sputtering
Indium tin oxide (ITO) thin films were deposited by ion beam sputtering. This paper aimed at the reach of high conductivity and high transmittance simultaneously at relatively low substrate temperature. In order to reach the objects, the influences of substrate temperature, ion beam energy, and oxyg...
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Published in: | Solar energy materials and solar cells 2001, Vol.65 (1), p.211-218 |
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container_end_page | 218 |
container_issue | 1 |
container_start_page | 211 |
container_title | Solar energy materials and solar cells |
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creator | Han, Younggun Kim, Donghwan Cho, Jun-Sik Koh, Seok-Keun Song, Yo Seung |
description | Indium tin oxide (ITO) thin films were deposited by ion beam sputtering. This paper aimed at the reach of high conductivity and high transmittance simultaneously at relatively low substrate temperature. In order to reach the objects, the influences of substrate temperature, ion beam energy, and oxygen gas flowing rate on the properties of deposited ITO films were investigated. Resistivity showed the lowest value of 1.5×10
−4
Ω
cm on the films deposited by 1.3
keV Ar ions at 100°C. The microstructure of the films was sub-grain (domain) structure. The ITO films have above 80% of transmittance in the visible wavelength including that of the glass substrate. |
doi_str_mv | 10.1016/S0927-0248(00)00097-0 |
format | article |
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−4
Ω
cm on the films deposited by 1.3
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−4
Ω
cm on the films deposited by 1.3
keV Ar ions at 100°C. The microstructure of the films was sub-grain (domain) structure. The ITO films have above 80% of transmittance in the visible wavelength including that of the glass substrate.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electrical properties of specific thin films</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Ion beam sputtering</subject><subject>ITO</subject><subject>Low substrate temperature</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Other inorganic semiconductors</subject><subject>Other semiconductors</subject><subject>Physics</subject><issn>0927-0248</issn><issn>1879-3398</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNqNkEtLAzEUhYMoWKs_QRgQpF2M3sxkJpOVSPFRKHRhXYc0uZHIvExmxP57pw-61dXhwnfugY-Qawp3FGh-_wYi4TEkrJgATAFADNcJGdGCizhNRXFKRkfknFyE8DlASZ6yEZmtXB2bpkUTudq4voqaH2cwmsxXy2lkXVlFBtsmuM41dbTeRLtAVUWh7bsOvas_LsmZVWXAq0OOyfvz02r2Gi-WL_PZ4yLWqeBdbLVFQJXxhGVWCMXBMANMM2WZUTlHYMlapZTmVlBWKAEKka91kSXFWpk8HZPb_d_WN189hk5WLmgsS1Vj0weZcEhzKui_QMizZACzPah9E4JHK1vvKuU3koLcupU7t3IrTgLInVsJQ-_mMKCCVqX1qtYuHMtFxkFsqYc9hYOUb4deBu2w1micR91J07g_dn4B_p2Mag</recordid><startdate>2001</startdate><enddate>2001</enddate><creator>Han, Younggun</creator><creator>Kim, Donghwan</creator><creator>Cho, Jun-Sik</creator><creator>Koh, Seok-Keun</creator><creator>Song, Yo Seung</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>JG9</scope></search><sort><creationdate>2001</creationdate><title>Tin-doped indium oxide (ITO) film deposition by ion beam sputtering</title><author>Han, Younggun ; Kim, Donghwan ; Cho, Jun-Sik ; Koh, Seok-Keun ; Song, Yo Seung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c397t-fcfe0ea57245f99a70d4d04c4af4da67e042ba3116f9148a90aee7bc8528bad63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electrical properties of specific thin films</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Ion beam sputtering</topic><topic>ITO</topic><topic>Low substrate temperature</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Other inorganic semiconductors</topic><topic>Other semiconductors</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Han, Younggun</creatorcontrib><creatorcontrib>Kim, Donghwan</creatorcontrib><creatorcontrib>Cho, Jun-Sik</creatorcontrib><creatorcontrib>Koh, Seok-Keun</creatorcontrib><creatorcontrib>Song, Yo Seung</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>Materials Research Database</collection><jtitle>Solar energy materials and solar cells</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Han, Younggun</au><au>Kim, Donghwan</au><au>Cho, Jun-Sik</au><au>Koh, Seok-Keun</au><au>Song, Yo Seung</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tin-doped indium oxide (ITO) film deposition by ion beam sputtering</atitle><jtitle>Solar energy materials and solar cells</jtitle><date>2001</date><risdate>2001</risdate><volume>65</volume><issue>1</issue><spage>211</spage><epage>218</epage><pages>211-218</pages><issn>0927-0248</issn><eissn>1879-3398</eissn><abstract>Indium tin oxide (ITO) thin films were deposited by ion beam sputtering. This paper aimed at the reach of high conductivity and high transmittance simultaneously at relatively low substrate temperature. In order to reach the objects, the influences of substrate temperature, ion beam energy, and oxygen gas flowing rate on the properties of deposited ITO films were investigated. Resistivity showed the lowest value of 1.5×10
−4
Ω
cm on the films deposited by 1.3
keV Ar ions at 100°C. The microstructure of the films was sub-grain (domain) structure. The ITO films have above 80% of transmittance in the visible wavelength including that of the glass substrate.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/S0927-0248(00)00097-0</doi><tpages>8</tpages></addata></record> |
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source | ScienceDirect Journals |
subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Ion beam sputtering ITO Low substrate temperature Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Other inorganic semiconductors Other semiconductors Physics |
title | Tin-doped indium oxide (ITO) film deposition by ion beam sputtering |
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