A 4.2-ps ECL ring-oscillator in a 285-GHz f(MAX) SiGe technology

This letter reports on the room temperature operation of a conventional SiGe bipolar ECL ring oscillator with a minimum stage delay of 4.2 ps for ~ 250 mV single ended voltage swing. To our knowledge, this is the lowest reported delay for a gate fabricated using transistor devices. The circuit uses...

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Bibliographic Details
Published in:IEEE electron device letters 2002-09, Vol.23 (9), p.541-543
Main Authors: Jagannathan, B, Meghelli, M, Rylyakov, A V, Groves, R A, Chinthakindi, A K, Schnabel, C M, Ahlgren, D A, Freeman, G G, Stein, K J, Subbanna, S
Format: Article
Language:English
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Summary:This letter reports on the room temperature operation of a conventional SiGe bipolar ECL ring oscillator with a minimum stage delay of 4.2 ps for ~ 250 mV single ended voltage swing. To our knowledge, this is the lowest reported delay for a gate fabricated using transistor devices. The circuit uses 0.12 x 2 microns/m exp 2 emitter size SiGe n-p-n transistors with a room temperature f(T) of 207 GHz and f(MAX) (unilateral gain extrapolation) of 285 GHz. The ring oscillator was studied as a function of various device and circuit parameters and it was found that minimum delay is more dependent on the parasitic resistance and capacitance in the n-p-n device than on pure transit time across the device. (Author)
ISSN:0741-3106
DOI:10.1109/LED.2002.802654