Exploring capabilities of electrical linewidth measurement (ELM) techniques

In this paper, we have investigated the linearity of the electrical linewidth measurement, and the relation to the linewidth values measured with a CD-SEM. The collected data has shown an almost constant bias between ELM and SEM values tested down to 50 nm. A comparison between poly- and α-Si lines...

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Bibliographic Details
Published in:Microelectronic engineering 2001-09, Vol.57, p.673-681
Main Authors: Rangelov, V., Sarstedt, M., Somerville, J., Marschner, T., Jonckheere, R., Poelaert, A.
Format: Article
Language:English
Subjects:
Applied sciences
Critical dimension
ECD
Electrical linewidth measurement
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
ELM
Exact sciences and technology
Metrology
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Summary:In this paper, we have investigated the linearity of the electrical linewidth measurement, and the relation to the linewidth values measured with a CD-SEM. The collected data has shown an almost constant bias between ELM and SEM values tested down to 50 nm. A comparison between poly- and α-Si lines with respect to different grain sizes was done. A further point of interest was the influence of the geometry of a line (e.g. straight vs. bent), as well as the dependence of the ELM result with regard to a changing linewidth along its length. An overview of an error analysis for the whole experimental procedure is presented.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(01)00455-5