650-mW single lateral mode power from tapered and flared buried ridge laser

Very high single lateral mode output powers of 650 mW are obtained from a diode laser with a unique waveguide design. The waveguide flares in the lateral dimension to create a larger spot size on the facet and simultaneously tapers in the transverse dimension to inhibit propagation of higher order l...

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Bibliographic Details
Published in:IEEE photonics technology letters 2002-09, Vol.14 (9), p.1237-1239
Main Authors: Swint, R.B., Huber, A.E., Yeoh, T.S., Woo, C.Y., Coleman, J.J., Faircloth, B.O., Zediker, M.S.
Format: Article
Language:English
Subjects:
Devices
Epitaxial growth
Epitaxy
Erbium-doped fiber lasers
Flares
Gallium arsenide
Laser modes
Lasers
Optical design
Optical propagation
Optical waveguides
Power generation
Power lasers
Pump lasers
Ridges
Wave propagation
Waveguide lasers
Waveguides
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Description
Summary:Very high single lateral mode output powers of 650 mW are obtained from a diode laser with a unique waveguide design. The waveguide flares in the lateral dimension to create a larger spot size on the facet and simultaneously tapers in the transverse dimension to inhibit propagation of higher order lateral modes. These GaAs buried ridge devices are fabricated by selective area epitaxy.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2002.801072