1/ f noise measurements in n-channel MOSFETs processed in 0.25 μm technology : Extraction of BSIM3v3 noise parameters

Low frequency noise has been studied from the weak to strong inversion regime in n-channel MOS transistors. The 1/ f current noise power spectrum density S ID is measured as a function of the drain current and gate voltage with the gate length as a parameter. Analysis of the noise characteristics sh...

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Bibliographic Details
Published in:Solid-state electronics 2002-03, Vol.46 (3), p.361-366
Main Authors: Akue Allogo, Y., de Murcia, M., Vildeuil, J.C., Valenza, M., Llinares, P., Cottin, D.
Format: Article
Language:English
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Summary:Low frequency noise has been studied from the weak to strong inversion regime in n-channel MOS transistors. The 1/ f current noise power spectrum density S ID is measured as a function of the drain current and gate voltage with the gate length as a parameter. Analysis of the noise characteristics shows that the channel noise agrees with the mobility fluctuation model and can be predicted in the linear and saturation region using the α H parameter only. Finally, the three parameters NOIA, NOIB and NOIC used in the BSIM3v3 noise model are extracted. Some discrepancies of the noise simulation with the experimental data are observed.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(01)00109-5