0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters

The purpose of this paper is to completely describe the low and high frequency performance including microwave noise parameters of 0.25 μm fully depleted (FD) silicon-on-insulator (SOI) devices and to compare the noise performance with 0.25 μm partially depleted (PD) devices. These FD devices presen...

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Bibliographic Details
Published in:Solid-state electronics 2002-03, Vol.46 (3), p.379-386
Main Authors: Vanmackelberg, M, Raynaud, C, Faynot, O, Pelloie, J.-L, Tabone, C, Grouillet, A, Martin, F, Dambrine, G, Picheta, L, Mackowiak, E, Llinares, P, Sevenhans, J, Compagne, E, Fletcher, G, Flandre, D, Dessard, V, Vanhoenacker, D, Raskin, J.-P
Format: Article
Language:English
Subjects:
Characterization
Microwave
MOSFET
Noise
SOI
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Summary:The purpose of this paper is to completely describe the low and high frequency performance including microwave noise parameters of 0.25 μm fully depleted (FD) silicon-on-insulator (SOI) devices and to compare the noise performance with 0.25 μm partially depleted (PD) devices. These FD devices present a state of the art NF min of 0.8 dB and high G ass of 13 dB at 6 GHz, at V ds =0.75 V , P dc
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(01)00120-4