Emitter series resistance effect of multiple heterojunction contacts for Pnp heterojunction bipolar transistors

For InP-based Pnp heterojunction bipolar transistors (HBTs), a set of epitaxial layers, frequently incorporating quaternaries, is used to make a low resistance electrical contact to the emitter layer. We describe an analytical approach to investigate the nonlinear effects of the multiple heterojunct...

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Bibliographic Details
Published in:Solid-state electronics 1999, Vol.43 (7), p.1299-1305
Main Authors: Datta, S, Roenker, K.P, Cahay, M.M
Format: Article
Language:English
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Summary:For InP-based Pnp heterojunction bipolar transistors (HBTs), a set of epitaxial layers, frequently incorporating quaternaries, is used to make a low resistance electrical contact to the emitter layer. We describe an analytical approach to investigate the nonlinear effects of the multiple heterojunction interfaces on the emitter series resistance and emitter junction current–voltage characteristics of the device. The simulation results show that heterojunction interfaces can contribute a substantial portion (up to 20%) to the total emitter series resistance, especially at high levels of emitter current.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(99)00117-3