A 1.5 Mpixel imager with localized hole-modulation method

A 1.5 Mpixel imager with 4.2 /spl mu/m square pixel is composed of a single MOSFET and a pinned photodiode. A localized high-density p-region near the source of the MOSFET converts the accumulated hole number to source voltage. Low random noise, low dark signal, high sensitivity with good color repr...

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Bibliographic Details
Published in:2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) 2002, Vol.1, p.42-442 vol.1
Main Authors: Miida, T., Kawajiri, K., Terakago, H., Endo, T., Okazaki, T., Yamamoto, S., Nishimura, A.
Format: Article
Language:English
Subjects:
CMOS image sensors
CMOS technology
Colored noise
Detectors
Energy consumption
FETs
Noise level
Pixel
System-on-a-chip
Voltage
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Summary:A 1.5 Mpixel imager with 4.2 /spl mu/m square pixel is composed of a single MOSFET and a pinned photodiode. A localized high-density p-region near the source of the MOSFET converts the accumulated hole number to source voltage. Low random noise, low dark signal, high sensitivity with good color reproduction and resolution are achieved.
ISSN:0193-6530
DOI:10.1109/ISSCC.2002.992929