1/ f noise in 0.18 μm technology n-MOSFETs from subthreshold to saturation

Low frequency noise in 0.18 μm technology n-MOSFETs is investigated in subthreshold, ohmic and saturation regimes. The impact of the channel length on the drain current noise characteristics is studied. The results are analysed as a function of the drain current or gate voltage and compared to the e...

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Bibliographic Details
Published in:Solid-state electronics 2002-07, Vol.46 (7), p.977-983
Main Authors: Akue Allogo, Y., Marin, M., de Murcia, M., Llinares, P., Cottin, D.
Format: Article
Language:English
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Summary:Low frequency noise in 0.18 μm technology n-MOSFETs is investigated in subthreshold, ohmic and saturation regimes. The impact of the channel length on the drain current noise characteristics is studied. The results are analysed as a function of the drain current or gate voltage and compared to the existing noise models. We find that the 1/ f noise can be interpreted in terms of carrier number fluctuations. The oxide trap density N t at the Fermi energy level is evaluated. The significant deviation of the normalised noise amplitude observed at high V GS is attributed to the noise in the access resistances. In deep saturation regime, for gate length device
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(02)00029-1