Comparative investigation of photoluminescence of silicon wire structures and silicon oxide films

• Published in: The Journal of physics and chemistry of solids 2002-04, Vol.63 (4), p.561-568
• Main Authors: Torchynska, T., Aguilar-Hernandez, J., Morales Rodriguez, M., Mejia-Garcia, C., Contreras-Puente, G., Becerril Espinoza, F.G., Bulakh, B.M., Scherbina, L.V., Goldstein, Y., Many, A., Jedrzejewski, J.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Elemental semiconductors; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics
• ISSN: 0022-3697; 1879-2553
• DOI: 10.1016/S0022-3697(01)00194-9

Photoluminescence spectra and their dependence on temperature as well as Raman scattering spectra and Atomic Force Microscopy investigations have been used to study the peculiarities of the red photoluminescence band in low-dimensional Si structures, such as porous silicon and silicon oxide films. It has been shown that the red photoluminescence band of porous silicon is complex and can be decomposed into two elementary bands. It was discovered that elementary band intensities depend very much on surface morphology of porous silicon. The same positions of the photoluminescence bands are also observed in silicon oxide films for different oxide composition. Comparative investigation of the PL temperature dependences in porous silicon and silicon oxide films indicates that silicon-oxide defect related mechanisms of some elementary photoluminescence bands are involved.