Contribution of the ZnSe/CuGaSe sub(2) heterojunction in photovoltaic performances of chalcopyrite-based solar cells

ZnSe/CuGaSe sub(2) heterojunctions were prepared by growing CuGaSe sub(2) absorber layers onto the (110) surface of ZnSe single crystals by flash evaporation, physical vapor deposition, chemical vapor deposition and metal-organic vapor phase epitaxy. The morphology of the absorber layers was studied...

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Bibliographic Details
Published in:Thin solid films 2002-02, Vol.403-404, p.344-348
Main Authors: Rusu, M, Sadewasser, S, Gashin, P, Simashkevich, A, Jager-Waldau, A, Glatzel, Th
Format: Article
Language:English
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Summary:ZnSe/CuGaSe sub(2) heterojunctions were prepared by growing CuGaSe sub(2) absorber layers onto the (110) surface of ZnSe single crystals by flash evaporation, physical vapor deposition, chemical vapor deposition and metal-organic vapor phase epitaxy. The morphology of the absorber layers was studied by scanning electron microscopy. Elemental distribution in the thin films investigated and along the heterojunction cross-section was characterized using energy-dispersive X-ray analysis. All heterojunctions prepared show high open-circuit voltages of 0.85-1.12 V, which slightly depend on the preparation method. Currents through the ZnSe/CuGaSe sub(2) heterojunctions are limited by the presence of a high-resistivity ( rho [similar to]10 super(8)-10 super(9) Omega cm) i-ZnSe layer at the interface, which is highly compensated by Cu impurities. copyright 2002 Elsevier Science B.V. All rights reserved.
ISSN:0040-6090