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UV-light-assisted gas sensor based on PdSe2/InSe heterojunction for ppb-level NO2 sensing at room temperature

The fabrication of van der Waals (vdWs) heterostructures mainly extends to two-dimensional (2D) materials. Nevertheless, the current processes for obtaining high-quality 2D films are mainly exfoliated from their bulk counterparts or by high-temperature chemical vapor deposition (CVD), which limits i...

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Published in:Nanoscale 2022-09, Vol.14 (36), p.13204-13213
Main Authors: Jin-Le, Fan, Xue-Feng, Hu, Wei-Wei, Qin, Zhi-Yuan, Liu, Yan-Song, Liu, Shou-Jing Gao, Li-Ping, Tan, Ji-Lei, Yang, Lin-Bao, Luo, Zhang, Wei
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container_issue 36
container_start_page 13204
container_title Nanoscale
container_volume 14
creator Jin-Le, Fan
Xue-Feng, Hu
Wei-Wei, Qin
Zhi-Yuan, Liu
Yan-Song, Liu
Shou-Jing Gao
Li-Ping, Tan
Ji-Lei, Yang
Lin-Bao, Luo
Zhang, Wei
description The fabrication of van der Waals (vdWs) heterostructures mainly extends to two-dimensional (2D) materials. Nevertheless, the current processes for obtaining high-quality 2D films are mainly exfoliated from their bulk counterparts or by high-temperature chemical vapor deposition (CVD), which limits industrial production and is often accompanied by defects. Herein, we first fabricated the type-II p-PdSe2/n-InSe vdWs heterostructure using the ultra-high vacuum laser molecular beam epitaxy (LMBE) technique combined with the vertical 2D stacking strategy, which is reproducible and suitable for high-volume manufacturing. This work found that the introduction of 365 nm UV light illumination can significantly improve the electrical transport properties and NO2 sensing performance of the PdSe2/InSe heterojunction-based device at room temperature (RT). The detailed studies confirm that the sensor based on the PdSe2/InSe heterojunction delivers the comparable sensitivity (Ra/Rg = ∼2.6 at 10 ppm), a low limit of detection of 52 ppb, and excellent selectivity for NO2 gas under UV light illumination, indicating great potential for NO2 detection. Notably, the sensor possesses fast response and full recovery properties (275/1078 s) compared to the results in the dark. Furthermore, the mechanism of enhanced gas sensitivity was proposed based on the energy band alignment of the PdSe2/InSe heterojunction with the assistance of investigating the surface potential variations. This work may pave the way for the development of high-performance, room-temperature gas sensors based on 2D vdWs heterostructures through the LMBE technique.
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The detailed studies confirm that the sensor based on the PdSe2/InSe heterojunction delivers the comparable sensitivity (Ra/Rg = ∼2.6 at 10 ppm), a low limit of detection of 52 ppb, and excellent selectivity for NO2 gas under UV light illumination, indicating great potential for NO2 detection. Notably, the sensor possesses fast response and full recovery properties (275/1078 s) compared to the results in the dark. Furthermore, the mechanism of enhanced gas sensitivity was proposed based on the energy band alignment of the PdSe2/InSe heterojunction with the assistance of investigating the surface potential variations. 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source Royal Society of Chemistry:Jisc Collections:Royal Society of Chemistry Read and Publish 2022-2024 (reading list)
subjects Chemical vapor deposition
Energy bands
Gas sensors
Heterojunctions
Heterostructures
High temperature
High vacuum
Illumination
Light
Molecular beam epitaxy
Nitrogen dioxide
Room temperature
Selectivity
Sensitivity enhancement
Sensors
Transport properties
Two dimensional materials
Ultraviolet radiation
title UV-light-assisted gas sensor based on PdSe2/InSe heterojunction for ppb-level NO2 sensing at room temperature
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