Cu\+v\3\-v\Ge Schottky contacts on n-GaN

The electrical properties and thermal stability of epsilon(sub1)-Cu(sub3)Ge (copper germanide) Schottky contacts to n-gallium nitride as a function of the germanium concentration and annealing temperature were studied. Upon rapid thermal annealing of the copper germanide/n-gallium nitride Schottky d...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2002-04, Vol.13 (4), p.203-206
Main Authors: Hsin, H.-C., Lin, W.-T., Gong, J R, Fang, Y K
Format: Article
Language:English
Online Access:Get full text
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Summary:The electrical properties and thermal stability of epsilon(sub1)-Cu(sub3)Ge (copper germanide) Schottky contacts to n-gallium nitride as a function of the germanium concentration and annealing temperature were studied. Upon rapid thermal annealing of the copper germanide/n-gallium nitride Schottky diode was formed at 300\0\C and was stable up to 650\0\C. At 700\0\C agglomeration occurred in the copper germanide films. For the copper-25 at% germanium films the ideality factor, barrier height and flat band barrier height for the diodes were in the ranges of 1.22-1.36, 0.53-0.72 eV and 0.65-0.97 eV, respectively, decreasing with the annealing temperature. Higher germanium concentration, in copper-35 at% germanium films resulted in higher figures for these parameters for the diodes. (Original abstract - amended)
ISSN:0957-4522